PART |
Description |
Maker |
K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A8036 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 & 512Kx18 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7A801809B K7A803609B K7A803609B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
K7P803666B K7P801866B |
256Kx36 AND 512Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7P803611M-H21 K7P801811M K7P801811M-H20 K7P801811 |
256Kx36 & 512Kx18 SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7N801809B K7N803609B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7M801825A K7M803625A |
256Kx36 & 512Kx18 Flow-Through NtRAM TM
|
Samsung semiconductor
|
GVT7C1356A |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge 7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|